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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX53/A/B/C APPLICATIONS Power linear and switching applications Hammer drivers,audio amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDX54/A/B/C Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER CONDITIONS BDX54 BDX54A BDX54B VCBO Collector-base voltage VCEO HAN INC Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Base current SEM GE BDX54C BDX54 BDX54A Open base BDX54B BDX54C Open emitter ICON DUC VALUE -45 -60 -80 TOR UNIT V -100 -45 -60 V -80 -100 VEBO IC ICM IB PC Tj Tstg Open collector -5 -8 -12 -0.2 V A A A W ae ae Collector power dissipation Junction temperature Storage temperature TC=25ae 60 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 2.08 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BDX54 BDX54A IC=-0.1A, IB=0 BDX54B BDX54C VCEsat VBE sat Collector-emitter saturation voltage Base-emitter saturation voltage BDX54 BDX54A ICBO Collector cut-off current BDX54B IC=-3A ,IB=-12mA IC=-3A ,IB=-12mA VCB=-45V, IE=0 VCB=-60V, IE=0 -80 -100 CONDITIONS MIN -45 -60 BDX54/A/B/C SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V -2.0 -2.5 V V -0.2 VCB=-80V, IE=0 VCB=-100V, IE=0 VCE=-22V, IB=0 VCE=-30V, IB=0 VCE=-40V, IB=0 mA ICEO IEBO hFE VF-1 VF-2 BDX54C BDX54 BDX54A BDX54B Collector cut-off current Emitter cut-off current DC current gain IN ANG CH BDX54C SEM E IF=-3A IF=-8A OND IC TOR UC -0.5 mA -2 mA VCE=-50V, IB=0 VEB=-5V; IC=0 IC=-3A ; VCE=-3V 750 -1.8 -2.5 -2.5 V V Forward diode voltage Forward diode voltage 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDX54/A/B/C SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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